Maximum Continuous Drain Current:
5 A
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
96 W
Maximum Gate Source Voltage:
±30 V
Height:
6.2mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
1 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD5NM60T4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/654499
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
96W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
Mounting Type:
Surface Mount
Series:
MDmesh™
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD5NM60
ECCN:
EAR99
