Maximum Power Dissipation Pd:
1.9W
Maximum Drain Source Voltage Vds:
-20V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
12.9mΩ
Forward Voltage Vf:
1.2V
Channel Type:
Type P
Package Type:
PICOSTAR
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
-3.6A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Automotive Standard:
AEC-Q101
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.05V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFLGA
Rds On (Max) @ Id, Vgs:
76mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.33 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD25501F3T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/7931886
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
-20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
385 pF @ 10 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-LGA (0.73x0.64)
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25501F3
ECCN:
EAR99
