Texas Instruments CSD17381F4 N-channel MOSFET, 3.1 A, 30 V FemtoFET, 3-Pin PICOSTAR
Product Information
Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Width:
0.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
250 mΩ
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.04 nC @ 4.5 V
Channel Type:
N
Length:
1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
FemtoFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
109mOhm @ 500mA, 8A
Gate Charge (Qg) (Max) @ Vgs:
1.35 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD17381F4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4091141
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
195 pF @ 15 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
3-PICOSTAR
Current - Continuous Drain (Id) @ 25°C:
3.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17381
ECCN:
EAR99
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This is N-channel MOSFET 3.1 A 30 V FemtoFET 3-Pin PICOSTAR manufactured by Texas Instruments. The manufacturer part number is CSD17381F4. While 3.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.6mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. It provides up to 250 mω maximum drain source resistance. The package is a sort of picostar. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.04 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product femtofet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. It has a maximum Rds On and voltage of 109mohm @ 500ma, 8a. The maximum gate charge and given voltages include 1.35 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is 12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 195 pf @ 15 v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 3-picostar is the supplier device package value. The continuous current drain at 25°C is 3.1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd17381, a base product number of the product. The product is designated with the ear99 code number.
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