Automotive Standard:
No
Maximum Power Dissipation Pd:
200W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
32nC
Maximum Drain Source Resistance Rds:
1.44Ω
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.5V
Height:
9.15mm
Width:
4.83 mm
Length:
10.66mm
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
7A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.44Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1890 pF @ 25 V
standardLeadTime:
98 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP7N80
ECCN:
EAR99
