STMicroelectronics STB30NF10T4
Product Information
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
115 W
Series:
STripFET II
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 mΩ
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 100V 35A (Tc) 115W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB30N
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 15A, 10V
FET Type:
N-Channel
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1180pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Customer Reference:
Power Dissipation (Max):
115W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship STB30NF10T4 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB30NF10T4. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 115 w maximum power dissipation. The product stripfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 45 mω maximum drain source resistance. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 100v 35a (tc) 115w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: stb30n. The maximum gate charge and given voltages include 55nc @ 10v. It has a maximum Rds On and voltage of 45mohm @ 15a, 10v. It carries FET type n-channel. The stmicroelectronics's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1180pf @ 25v. The product stripfet™ ii, is a highly preferred choice for users. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 115w (tc). This product use mosfet (metal oxide) technology.
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