Microchip Technology 2N7000-G
Product Information
Maximum Continuous Drain Current:
200 mA
Width:
4.06mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Length:
5.08mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Series:
2N7000
Maximum Gate Source Voltage:
30 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
5.3 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
2N7000-G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4902350
Package:
Bag
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
200mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7000
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship 2N7000-G Internationally to many countries around the world.
This is manufactured by Microchip Technology. The manufacturer part number is 2N7000-G. While 200 ma of maximum continuous drain current. Furthermore, the product is 4.06mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of to-92. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 5.08mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. The product 2n7000, is a highly preferred choice for users. It features a maximum gate source voltage of 30 v. In addition, the height is 5.33mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.85v . It provides up to 5.3 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). It has a maximum Rds On and voltage of 5ohm @ 500ma, 10v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bag package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (tc). The product's input capacitance at maximum includes 60 pf @ 25 v. It has a long 8 weeks standard lead time. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 200ma (tj). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2n7000, a base product number of the product. The product is designated with the ear99 code number.
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