STMicroelectronics STU8N80K5
Product Information
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.5 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.2mm
Maximum Drain Source Resistance:
950 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
950mOhm @ 3A, 10V
edacadModel:
STU8N80K5 Models
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3993111
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU8N80
ECCN:
EAR99
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Yes. We ship STU8N80K5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STU8N80K5. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.4mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 110 w maximum power dissipation. The product mdmesh k5, supermesh5, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 6.2mm. It provides up to 950 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 950mohm @ 3a, 10v. The maximum gate charge and given voltages include 16.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 450 pf @ 100 v. The product supermesh5™, is a highly preferred choice for users. to-251 (ipak) is the supplier device package value. The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stu8n80, a base product number of the product. The product is designated with the ear99 code number.
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