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IXYS IXFK32N80Q3

IXFK32N80Q3 IXYS
IXFK32N80Q3
IXFK32N80Q3
ET12160705
ET12160705
Single FETs, MOSFETs
Single FETs, MOSFETs
IXYS

Product Information

Category:
Power MOSFET
Dimensions:
19.96 x 5.13 x 26.16mm
Maximum Continuous Drain Current:
32 A
Transistor Material:
Si
Width:
5.13mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
6V
Maximum Drain Source Resistance:
270 mΩ
Package Type:
TO-264
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
140 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6940 pF @ 25 V
Length:
19.96mm
Pin Count:
3
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 kW
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
26.16mm
Typical Turn-On Delay Time:
38 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Rds On (Max) @ Id, Vgs:
270mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1000W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6940 pF @ 25 V
standardLeadTime:
98 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
TO-264AA (IXFK)
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK32
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFK32N80Q3. It is of power mosfet category . The given dimensions of the product include 19.96 x 5.13 x 26.16mm. While 32 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.13mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 6v of maximum gate threshold voltage. It provides up to 270 mω maximum drain source resistance. The package is a sort of to-264. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 140 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 6940 pf @ 25 v . Its accurate length is 19.96mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 45 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1 kw maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 26.16mm. In addition, it has a typical 38 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6.5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-264-3, to-264aa. It has a maximum Rds On and voltage of 270mohm @ 16a, 10v. The maximum gate charge and given voltages include 140 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1000w (tc). The product's input capacitance at maximum includes 6940 pf @ 25 v. It has a long 98 weeks standard lead time. The product hiperfet™, q3 class, is a highly preferred choice for users. to-264aa (ixfk) is the supplier device package value. The continuous current drain at 25°C is 32a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfk32, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
IXFK32N80Q3, IXFX32N80Q3, HiperFET Power MOSFET, Q3-Class, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
IXFx32N80Q3(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET12160705. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFK32N80Q3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFK32N80Q3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFK32N80Q3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12160705 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12160705.
Yes. We ship IXFK32N80Q3 Internationally to many countries around the world.