Forward Voltage Vf:
1.6V
Width:
9.35 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
18.8nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
4A
Product Type:
SuperMESH Power MOSFET
Maximum Drain Source Resistance Rds:
2Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
600V
Channel Type:
Type N
Length:
10.4mm
Standards/Approvals:
JEDEC JESD97
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
70W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±30 V
Series:
SuperMESH
Height:
4.6mm
Minimum Operating Temperature:
-55°C
Base Part Number:
STB4N
Detailed Description:
N-Channel 600V 4A (Tc) 70W (Tc) Surface Mount D2PAK
Input Capacitance (Ciss) (Max) @ Vds:
510pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Series:
SuperMESH™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
70W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
STMicroelectronics
