Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.8 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
70 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 Ω
Base Part Number:
STB4N
Detailed Description:
N-Channel 600V 4A (Tc) 70W (Tc) Surface Mount D2PAK
Input Capacitance (Ciss) (Max) @ Vds:
510pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Series:
SuperMESH™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
70W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
STMicroelectronics
