Toshiba Semiconductor and Storage SSM3K56MFV,L3F
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-723
Rds On (Max) @ Id, Vgs:
235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SSM3K56MFV,L3F Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/5810229
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
55 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
VESM
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K56
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship SSM3K56MFV,L3F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K56MFV,L3F. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-723. It has a maximum Rds On and voltage of 235mohm @ 800ma, 4.5v. The maximum gate charge and given voltages include 1 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150mw (ta). The product's input capacitance at maximum includes 55 pf @ 10 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. vesm is the supplier device package value. The continuous current drain at 25°C is 800ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k56, a base product number of the product. The product is designated with the ear99 code number.
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