Automotive Standard:
No
Maximum Power Dissipation Pd:
125W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
40nC
Maximum Drain Source Resistance Rds:
1.8Ω
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.6V
Height:
4.6mm
Width:
10.4 mm
Length:
10.75mm
Package Type:
TO-263
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
5.2A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 2.6A, 10V
title:
STB7NK80ZT4
Vgs(th) (Max) @ Id:
4.5V @ 100µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1138 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB7NK80
ECCN:
EAR99
