STMicroelectronics STH160N4LF6-2
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
180 nC
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
DeepGate, STripFET
Channel Type:
N
Length:
15.8mm
Maximum Drain Source Resistance:
3.2 mΩ
Package Type:
H2PAK-2
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 A
Minimum Gate Threshold Voltage:
1V
Transistor Material:
Si
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 60A, 10V
edacadModel:
STH160N4LF6-2 Models
Gate Charge (Qg) (Max) @ Vgs:
181 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/5244714
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8130 pF @ 20 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
H2Pak-2
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH160
ECCN:
EAR99
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Yes. We ship STH160N4LF6-2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STH160N4LF6-2. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 180 nc. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It provides up to 3.2 mω maximum drain source resistance. The package is a sort of h2pak-2. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.2mohm @ 60a, 10v. The maximum gate charge and given voltages include 181 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 8130 pf @ 20 v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. h2pak-2 is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sth160, a base product number of the product. The product is designated with the ear99 code number.
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