Automotive Standard:
No
Maximum Power Dissipation Pd:
190W
Maximum Drain Source Voltage Vds:
500V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Drain Source Resistance Rds:
0.27Ω
Forward Voltage Vf:
1.6V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
119nC
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Standards/Approvals:
RoHS Compliant
Maximum Continuous Drain Current Id:
17A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
270mOhm @ 8.5A, 10V
title:
STP20NK50Z
Vgs(th) (Max) @ Id:
4.5V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
STP20NK50Z Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1039538
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
119 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP20
ECCN:
EAR99
