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STB13NK60ZT4, STMicroelectronics

STB13NK60ZT4 STMicroelectronics

Product Information

Maximum Continuous Drain Current:
13 A
Transistor Material:
Transistor Configuration:
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
Minimum Gate Threshold Voltage:
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Channel Type:
Pin Count:
Channel Mode:
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
550 mΩ
FET Feature:
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
550mOhm @ 4.5A, 10V
STB13NK60ZT4 Models
Gate Charge (Qg) (Max) @ Vgs:
92 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
Drive Voltage (Max Rds On, Min Rds On):
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2030 pF @ 25 V
Mounting Type:
Surface Mount
Supplier Device Package:
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
MOSFET (Metal Oxide)
Base Product Number:
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STB13NK60ZT4. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.35mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 w maximum power dissipation. The product mdmesh, supermesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 550 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 550mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 92 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 2030 pf @ 25 v. The product supermesh™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb13, a base product number of the product. The product is designated with the ear99 code number.

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MOSFET N-ch 13A 600V SuperMESH D2PAK(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IPG-PWR/14/8422 11/Apr/2014(PCN Design/Specification)
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D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)
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