IXYS IXFH22N65X2
Product Information
Category:
Power MOSFET
Dimensions:
16.24 x 21.45 x 5.3mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
21.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2190 pF @ 25 V
Length:
16.24mm
Pin Count:
3
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
42 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
390 W
Series:
HiperFET, X2-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.3mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
145 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
160mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2310 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH22
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11849167 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11849167.
Yes. We ship IXFH22N65X2 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFH22N65X2. It is of power mosfet category . The given dimensions of the product include 16.24 x 21.45 x 5.3mm. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2190 pf @ 25 v . Its accurate length is 16.24mm. It contains 3 pins. The forward transconductance is 14s . Whereas, its typical turn-off delay time is about 42 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 390 w maximum power dissipation. The product hiperfet, x2-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.3mm. In addition, it has a typical 30 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 145 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 1.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 160mohm @ 11a, 10v. The maximum gate charge and given voltages include 38 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 2310 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-247 (ixth) is the supplier device package value. The continuous current drain at 25°C is 22a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh22, a base product number of the product. The product is designated with the ear99 code number.
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