STMicroelectronics STW25NM60ND
Product Information
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Length:
15.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
160 W
Series:
FDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.15mm
Maximum Drain Source Resistance:
160 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
160mOhm @ 10.5A, 10V
edacadModel:
STW25NM60ND Models
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1983199
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 50 V
Mounting Type:
Through Hole
Series:
FDmesh™ II
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW25N
ECCN:
EAR99
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Yes. We ship STW25NM60ND Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STW25NM60ND. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 160 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 20.15mm. It provides up to 160 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 160mohm @ 10.5a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 160w (tc). The product's input capacitance at maximum includes 2400 pf @ 50 v. The product fdmesh™ ii, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw25n, a base product number of the product. The product is designated with the ear99 code number.
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