Forward Voltage Vf:
1.3V
Width:
10.4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
20nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
12A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
290mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
600V
Channel Type:
Type N
Length:
9.35mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
90W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
MDmesh DM2
Height:
4.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
295mOhm @ 6A, 10V
title:
STB18N60DM2
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB18N60DM2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5866613
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ DM2
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18
ECCN:
EAR99
