Toshiba Semiconductor and Storage TPW4R50ANH,L1Q
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 46A, 10V
edacadModel:
TPW4R50ANH,L1Q Models
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5117195
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
800mW (Ta), 142W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5200 pF @ 50 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C:
92A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPW4R50
ECCN:
EAR99
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TPW4R50ANH,L1Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPW4R50ANH,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPW4R50ANH,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11660097 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11660097.
Yes. We ship TPW4R50ANH,L1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW4R50ANH,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 4.5mohm @ 46a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 800mw (ta), 142w (tc). The product's input capacitance at maximum includes 5200 pf @ 50 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. The continuous current drain at 25°C is 92a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpw4r50, a base product number of the product. The product is designated with the ear99 code number.
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