Maximum Continuous Drain Current:
53 A
Transistor Material:
Si
Width:
25.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
ISOTOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
310 nC @ 10 V
Channel Type:
N
Length:
38.2mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
460 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.1mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
80 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
ISOTOP
Rds On (Max) @ Id, Vgs:
80mOhm @ 27A, 10V
title:
STE53NC50
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STE53NC50 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/603801
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
460W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
11200 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
PowerMESH™ II
Gate Charge (Qg) (Max) @ Vgs:
434 nC @ 10 V
Supplier Device Package:
ISOTOP®
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STE53
ECCN:
EAR99
