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IXYS IXFQ28N60P3

IXFQ28N60P3 IXYS
IXFQ28N60P3
IXYS

Product Information

Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
50 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
695 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
260 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
260mOhm @ 14A, 10V
title:
IXFQ28N60P3
Vgs(th) (Max) @ Id:
5V @ 2.5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
695W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3560 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Supplier Device Package:
TO-3P
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFQ28
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFQ28N60P3. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 50 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 695 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 260 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 260mohm @ 14a, 10v. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 695w (tc). It has a long 44 weeks standard lead time. The product's input capacitance at maximum includes 3560 pf @ 25 v. The product hiperfet™, polar3™, is a highly preferred choice for users. The maximum gate charge and given voltages include 50 nc @ 10 v. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfq28, a base product number of the product. The product is designated with the ear99 code number.

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IXFQ28N60P3, IXFH28N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IXFQ-FH28N60P3(Datasheets)
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Multiple Devices Material 23/Jun/2020(PCN Design/Specification)

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FAQs

Yes. You can also search IXFQ28N60P3 on website for other similar products.
We accept all major payment methods for all products including ET11613828. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFQ28N60P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFQ28N60P3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFQ28N60P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11613828 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11613828.
Yes. We ship IXFQ28N60P3 Internationally to many countries around the world.