Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
50 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
695 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
260 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
260mOhm @ 14A, 10V
title:
IXFQ28N60P3
Vgs(th) (Max) @ Id:
5V @ 2.5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
695W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3560 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Supplier Device Package:
TO-3P
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFQ28
ECCN:
EAR99
