STMicroelectronics STW45NM60
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
96 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
417 W
Series:
MDmesh
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.15mm
Width:
5.15mm
Length:
15.75mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 22.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
134 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STW45NM60 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/603793
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
417W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3800 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW45
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STW45NM60 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STW45NM60. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 96 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 417 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.15mm. Furthermore, the product is 5.15mm wide. Its accurate length is 15.75mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 110mohm @ 22.5a, 10v. The maximum gate charge and given voltages include 134 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 417w (tc). The product's input capacitance at maximum includes 3800 pf @ 25 v. It has a long 26 weeks standard lead time. The product mdmesh™, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 45a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw45, a base product number of the product. The product is designated with the ear99 code number.
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