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STMicroelectronics STD13NM60ND

STD13NM60ND STMicroelectronics
STD13NM60ND
STD13NM60ND
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24.5 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
109 W
Series:
FDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
380 mΩ
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 600V 11A (Tc) 109W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD13
Gate Charge (Qg) (Max) @ Vgs:
24.5nC @ 10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
845pF @ 50V
Mounting Type:
Surface Mount
Series:
FDmesh™ II
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Customer Reference:
Power Dissipation (Max):
109W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD13NM60ND. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 109 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 380 mω maximum drain source resistance. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 600v 11a (tc) 109w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std13. The maximum gate charge and given voltages include 24.5nc @ 10v. It has a maximum Rds On and voltage of 380mohm @ 5.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 845pf @ 50v. The product fdmesh™ ii, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). The product carries maximum power dissipation 109w (tc). This product use mosfet (metal oxide) technology.

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Power MOSFET Nchannel FDmesh II 600V 11A Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
pdf icon
STx13NM60ND(Datasheets)

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Yes. We ship STD13NM60ND Internationally to many countries around the world.