Category:
Power MOSFET
Dimensions:
10.52 x 4.7 x 15.85mm
Maximum Continuous Drain Current:
9.2 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
490 pF @ 25 V
Length:
10.52mm
Pin Count:
3
Forward Transconductance:
3.2S
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
±10 V
Height:
15.85mm
Typical Turn-On Delay Time:
9.8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.5V
Maximum Drain Source Resistance:
380 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
270mOhm @ 5.5A, 5V
title:
IRL520PBF
Vgs(th) (Max) @ Id:
2V @ 250µA
edacadModel:
IRL520PBF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
edacadModelUrl:
/en/models/811718
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Supplier Device Package:
TO-220AB
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
9.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRL520
ECCN:
EAR99
