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Vishay Siliconix SI1070X-T1-GE3

SI1070X-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.55V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
99mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
236mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
385 pF @ 15 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-89 (SOT-563F)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1070
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI1070X-T1-GE3. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.55v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 99mohm @ 1.2a, 4.5v. The maximum gate charge and given voltages include 8.3 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 236mw (ta). The product's input capacitance at maximum includes 385 pf @ 15 v. It has a long 11 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sc-89 (sot-563f) is the supplier device package value. The continuous current drain at 25°C is 1.2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si1070, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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Si1070X(Datasheets)
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New Material 24/Mar/2021(PCN Design/Specification)
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Material Compliance(Environmental Information)
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Vishay Aluminum Capacitor and Energy Storage REACH(Environmental Information)

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FAQs

Yes. You can also search SI1070X-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11353013. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI1070X-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI1070X-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI1070X-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11353013 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11353013.
Yes. We ship SI1070X-T1-GE3 Internationally to many countries around the world.