Automotive Standard:
No
Maximum Power Dissipation Pd:
350W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
91nC
Series:
MDmesh M2
Maximum Gate Source Voltage Vgs:
25 V
Forward Voltage Vf:
1.6V
Height:
20.15mm
Width:
5.15 mm
Length:
15.75mm
Package Type:
TO-247
Maximum Drain Source Resistance Rds:
55mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
52A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
55mOhm @ 26A, 10V
title:
STW56N60M2
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STW56N60M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244950
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3750 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW56
ECCN:
EAR99
