Infineon Technologies IPD60N10S4L12ATMA1
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
12mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Vgs(th) (Max) @ Id:
2.1V @ 46µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
94W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3170 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
HEXFET®
Supplier Device Package:
PG-TO252-3-313
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD60N10
ECCN:
EAR99
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FAQs
Yes. You can also search IPD60N10S4L12ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET11163982. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPD60N10S4L12ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPD60N10S4L12ATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPD60N10S4L12ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11163982 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11163982.
Yes. We ship IPD60N10S4L12ATMA1 Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is IPD60N10S4L12ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 12mohm @ 60a, 10v. The maximum gate charge and given voltages include 49 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.1v @ 46µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 94w (tc). The product's input capacitance at maximum includes 3170 pf @ 25 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. The product hexfet®, is a highly preferred choice for users. pg-to252-3-313 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipd60n10, a base product number of the product. The product is designated with the ear99 code number.
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