Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
2850 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
148 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Series:
STripFET F6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
43 ns
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
29 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20.5mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STS7P4LLF6 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5455721
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2850 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ F6
Supplier Device Package:
8-SO
Current - Continuous Drain (Id) @ 25°C:
7A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS7P4
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STS7P4LLF6. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2850 pf @ 25 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 148 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.7 w maximum power dissipation. The product stripfet f6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. In addition, it has a typical 43 ns turn-on delay time . Its forward diode voltage is 1.1v . It provides up to 29 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 20.5mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 22 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.7w (ta). The product's input capacitance at maximum includes 2850 pf @ 25 v. It has a long 26 weeks standard lead time. The product stripfet™ f6, is a highly preferred choice for users. 8-so is the supplier device package value. The continuous current drain at 25°C is 7a (tj). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sts7p4, a base product number of the product. The product is designated with the ear99 code number.
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