Toshiba Semiconductor and Storage TK40E06N1,S1X
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 300µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 20A, 10V
edacadModel:
TK40E06N1,S1X Models
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3587032
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
67W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 30 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK40E06
ECCN:
EAR99
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with TK40E06N1,S1X directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK40E06N1,S1X. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK40E06N1,S1X.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11102302 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11102302.
Yes. We ship TK40E06N1,S1X Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK40E06N1,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 300µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 10.4mohm @ 20a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 67w (tc). The product's input capacitance at maximum includes 1700 pf @ 30 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk40e06, a base product number of the product. The product is designated with the ear99 code number.
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