Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
41 nC @ 10 V
Channel Type:
N
Length:
5.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
127 W
Series:
STripFET F7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
2mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL190N4F7AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/6164325
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
127W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount, Wettable Flank
Grade:
Automotive
Series:
STripFET™
Supplier Device Package:
PowerFlat™ (5x6)
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL190
ECCN:
EAR99
