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STMicroelectronics STF13N80K5

STF13N80K5 STMicroelectronics
STF13N80K5
STF13N80K5
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Channel Type:
N
Length:
10.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.4mm
Maximum Drain Source Resistance:
450 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
450mOhm @ 6A, 10V
edacadModel:
STF13N80K5 Models
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4156657
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF13
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STF13N80K5. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w maximum power dissipation. The product mdmesh k5, supermesh5, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.4mm. It provides up to 450 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 450mohm @ 6a, 10v. The maximum gate charge and given voltages include 29 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). The product's input capacitance at maximum includes 870 pf @ 100 v. The product supermesh5™, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf13, a base product number of the product. The product is designated with the ear99 code number.

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Power MOSFET N ch SuperMESH5 800V 12A Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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ST(B,F,P,W)13N80K5(Datasheets)
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Box Label Chg 28/Jul/2016(PCN Packaging)

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Yes. We ship STF13N80K5 Internationally to many countries around the world.