Toshiba Semiconductor and Storage SSM3K59CTB,L3F
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, No Lead
Rds On (Max) @ Id, Vgs:
215mOhm @ 1A, 8V
edacadModel:
SSM3K59CTB,L3F Models
Gate Charge (Qg) (Max) @ Vgs:
1.1 nC @ 4.2 V
RoHS Status:
ROHS3 Compliant
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
edacadModelUrl:
/en/models/5810230
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
130 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
CST3B
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K59
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship SSM3K59CTB,L3F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K59CTB,L3F. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, no lead. It has a maximum Rds On and voltage of 215mohm @ 1a, 8v. The maximum gate charge and given voltages include 1.1 nc @ 4.2 v. The product is rohs3 compliant. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 8v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 130 pf @ 10 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3b is the supplier device package value. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k59, a base product number of the product. The product is designated with the ear99 code number.
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