STMicroelectronics STW18NM60ND
Product Information
Category:
Power MOSFET
Dimensions:
15.75 x 5.15 x 20.15mm
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1030 pF @ 50 V
Length:
15.75mm
Pin Count:
3
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Series:
FDmesh
Maximum Gate Source Voltage:
±25 V
Height:
20.15mm
Typical Turn-On Delay Time:
55 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
290 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
290mOhm @ 6.5A, 10V
edacadModel:
STW18NM60ND Models
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4250830
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 50 V
Mounting Type:
Through Hole
Series:
FDmesh™ II
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW18N
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search STW18NM60ND on website for other similar products.
We accept all major payment methods for all products including ET10987805. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STW18NM60ND directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STW18NM60ND. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STW18NM60ND.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10987805 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10987805.
Yes. We ship STW18NM60ND Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STW18NM60ND. It is of power mosfet category . The given dimensions of the product include 15.75 x 5.15 x 20.15mm. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1030 pf @ 50 v . Its accurate length is 15.75mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 13 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 20.15mm. In addition, it has a typical 55 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 290 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 290mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 1030 pf @ 50 v. The product fdmesh™ ii, is a highly preferred choice for users. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw18n, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.