Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Length:
10.41mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
390 W
Series:
HiperFET, X2-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
145 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
160mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2310 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-263HV
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA22
ECCN:
EAR99
This is manufactured by IXYS. The manufacturer part number is IXFA22N65X2. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.05mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 390 w maximum power dissipation. The product hiperfet, x2-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 145 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 1.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 160mohm @ 11a, 10v. The maximum gate charge and given voltages include 38 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 2310 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-263hv is the supplier device package value. The continuous current drain at 25°C is 22a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfa22, a base product number of the product. The product is designated with the ear99 code number.
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