Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
4.9nC
Series:
SuperMESH
Maximum Gate Source Voltage Vgs:
±30 V
Forward Voltage Vf:
1.6V
Height:
1.8mm
Width:
3.7 mm
Length:
6.7mm
Package Type:
SOT-223
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
15Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
300mA
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
4
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
15Ohm @ 400mA, 10V
title:
STN1NK60Z
Vgs(th) (Max) @ Id:
4.5V @ 50µA
REACH Status:
REACH Unaffected
edacadModel:
STN1NK60Z Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/669372
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
94 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 10 V
Supplier Device Package:
SOT-223
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
300mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN1NK60
ECCN:
EAR99
