Forward Voltage Vf:
1.5V
Width:
9.35 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
82nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
35A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
78mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
710V
Channel Type:
Type N
Length:
10.4mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
210W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
MDmesh M5
Height:
4.6mm
Minimum Operating Temperature:
-55°C
Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 650V 35A (Tc) 210W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB45
Gate Charge (Qg) (Max) @ Vgs:
91nC @ 10V
Rds On (Max) @ Id, Vgs:
78mOhm @ 19.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3375pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Customer Reference:
Power Dissipation (Max):
210W (Tc)
Technology:
MOSFET (Metal Oxide)
