Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
210 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
4.6mm
Maximum Drain Source Resistance:
78 mΩ
Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 650V 35A (Tc) 210W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB45
Gate Charge (Qg) (Max) @ Vgs:
91nC @ 10V
Rds On (Max) @ Id, Vgs:
78mOhm @ 19.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3375pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Customer Reference:
Power Dissipation (Max):
210W (Tc)
Technology:
MOSFET (Metal Oxide)
