Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
34 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
20 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
15mOhm @ 3A, 10V
title:
STS10P4LLF6
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
REACH Status:
REACH Unaffected
edacadModel:
STS10P4LLF6 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5244765
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3525 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ F6
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 4.5 V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS10
ECCN:
EAR99
