STMicroelectronics STU7NM60N
Product Information
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
45 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
6.9mm
Maximum Drain Source Resistance:
900 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STU7NM60N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2827164
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
363 pF @ 50 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU7NM60
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is STU7NM60N. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.4mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 6.9mm. It provides up to 900 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 900mohm @ 2.5a, 10v. The maximum gate charge and given voltages include 14 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 45w (tc). The product's input capacitance at maximum includes 363 pf @ 50 v. It has a long 16 weeks standard lead time. The product mdmesh™ ii, is a highly preferred choice for users. to-251 (ipak) is the supplier device package value. The continuous current drain at 25°C is 5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stu7nm60, a base product number of the product. The product is designated with the ear99 code number.
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