Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
190 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
5V
Height:
4.6mm
Width:
10.4mm
Length:
10.75mm
Minimum Gate Threshold Voltage:
3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Maximum Drain Source Resistance:
79 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
79mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB42N65M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2043610
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4650 pF @ 100 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB42
ECCN:
EAR99
