Toshiba Semiconductor and Storage TK100L60W,VQ
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.7V @ 5mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
Rds On (Max) @ Id, Vgs:
18mOhm @ 50A, 10V
edacadModel:
TK100L60W,VQ Models
Gate Charge (Qg) (Max) @ Vgs:
360 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3945698
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
797W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
15000 pF @ 30 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-3P(L)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK100L60
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK100L60W,VQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK100L60W,VQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10863720 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10863720.
Yes. We ship TK100L60W,VQ Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK100L60W,VQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.7v @ 5ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. It has a maximum Rds On and voltage of 18mohm @ 50a, 10v. The maximum gate charge and given voltages include 360 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 797w (tc). The product's input capacitance at maximum includes 15000 pf @ 30 v. It has a long 52 weeks standard lead time. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-3p(l) is the supplier device package value. The continuous current drain at 25°C is 100a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk100l60, a base product number of the product. The product is designated with the ear99 code number.
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