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This is manufactured by Renesas Electronics Corporation. The manufacturer part number is 2SB562CTZ-E. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 350mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 500mv @ 80ma, 800ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. The product is designated with the ear99 code number.
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