Fairchild Semiconductor KSB1116AGBU

KSB1116AGBU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Frequency - Transition:
120MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
750 mW
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is KSB1116AGBU. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 300mv @ 50ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. The transistor is a pnp type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 750 mw. The product is designated with the ear99 code number.

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