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Toshiba Semiconductor and Storage 2SA2195,LF

2SA2195-LF Toshiba Semiconductor and Storage 2SA2195,LF
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
1.7 A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 300mA, 2V
edacadModel:
2SA2195,LF Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
200mV @ 33mA, 1A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/10379918
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
UFM
Power - Max:
500 mW
Base Product Number:
2SA2195
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA2195,LF. The maximum collector current includes 1.7 a. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat leads. Furthermore, 200 @ 300ma, 2v is the minimum DC current gain at given voltage. The 200mv @ 33ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. ufm is the supplier device package value. The maximum power of the product is 500 mw. Moreover, it corresponds to 2sa2195, a base product number of the product. The product is designated with the ear99 code number.

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Yes. We ship 2SA2195,LF Internationally to many countries around the world.