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BD1396STU, Fairchild Semiconductor

BD1396STU ON Semi  NPN Transistor, 1.5 A, 80 V, 3-Pin TO-126
Single Bipolar Transistors
Single Bipolar Transistors
Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
Transistor Type:
8.3 x 3.45 x 11.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Package Type:
Number of Elements per Chip:
Maximum DC Collector Current:
1.5 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
Transistor Configuration:
Current - Collector (Ic) (Max):
1.5 A
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
Frequency - Transition:
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
Transistor Type:
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Supplier Device Package:
Power - Max:
1.25 W
Base Product Number:
RoHs Compliant
Checking for live stock

This is ON Semi NPN Transistor 1.5 A 80 V 3-Pin TO-126 manufactured by Fairchild Semiconductor. The manufacturer part number is BD1396STU. It features up to 25 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 8.3 x 3.45 x 11.2mm. The product is available in through hole configuration. Provides up to 12.5 w maximum power dissipation. The product has a maximum 0.5 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). In addition, the height is 11.2mm. Furthermore, the product is 3.45mm wide. Its accurate length is 8.3mm. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.5 a. It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 1.5 a. It is assigned with possible HTSUS value of 0000.00.0000. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 40 @ 150ma, 2v is the minimum DC current gain at given voltage. The 500mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. to-126-3 is the supplier device package value. The maximum power of the product is 1.25 w. Moreover, it corresponds to bd139, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
BD135 / 137 / 139, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)


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