Toshiba Semiconductor and Storage 2SC5200N(S1,E,S)
Product Information
Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
230 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
edacadModel:
2SC5200N(S1,E,S) Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/4815288
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Power - Max:
150 W
Base Product Number:
2SC5200
ECCN:
EAR99
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Yes. We ship 2SC5200N(S1,E,S) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5200N(S1,E,S). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 230 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 800ma, 8a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 12 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The maximum power of the product is 150 w. Moreover, it corresponds to 2sc5200, a base product number of the product. The product is designated with the ear99 code number.
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