Mounting Type:
Surface Mount
Diode Technology:
Schottky Barrier
Peak Non-Repetitive Forward Surge Current:
100mA
Maximum Forward Voltage Drop:
1V
Maximum Continuous Forward Current:
70mA
Rectifier Type:
Schottky Diode
Package Type:
SOT-23
Number of Elements per Chip:
1
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
70V
HTSUS:
8541.10.0070
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-236-3, SC-59, SOT-23-3
edacadModel:
BAS70LT1G Models
Operating Temperature - Junction:
-55°C ~ 150°C
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918313
Current - Average Rectified (Io):
70mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
70 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Current - Reverse Leakage @ Vr:
10 µA @ 70 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Technology:
Schottky
Base Product Number:
BAS70
ECCN:
EAR99
The BAS70LT1G is a surface-mount Schottky Barrier Diode manufactured by ON Semiconductor. The device features a low forward voltage drop, high current density, and fast switching speed, making it ideal for use in high-frequency circuits. This device is designed to be used in a wide range of applications, including low-voltage rectification, switching, and power conditioning.
Construction and Features of BAS70LT1G, onsemi Schottky Barrier Diode, SMD:
Applications of BAS70LT1G, onsemi Schottky Barrier Diode, SMD:
The BAS70LT1G is designed to be used in a wide range of applications, including:
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