OSI Optoelectronics APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52
Product Information
Polarity:
Reverse
Diameter:
5.4mm
Peak Photo Sensitivity:
50A/W
Mounting Type:
Through Hole
Wavelength of Peak Sensitivity:
800nm
Diode Material:
Si
Height:
3.25mm
Minimum Wavelength Detected:
600nm
Package Type:
TO-52
Amplifier Function:
No
Number of Pins:
3
Spectrums Detected:
Infrared
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Yes. We ship APD10-8-150-T52 Internationally to many countries around the world.
This is IR Si Photodiode Through Hole TO-52 manufactured by OSI Optoelectronics. The manufacturer part number is APD10-8-150-T52. While providing reverse polarity. Its diameter is 5.4mm. Its peak photo sensitivity is approximately 50a/w . The product is available in through hole configuration. Furthermore, its wavelength of peak sensitivity is 800nm . Its diode is made of si material . In addition, the height is 3.25mm. Moreover, it has a minimum 600nm detected wavelength . The package is a sort of to-52. It offers an amplifier function no . It is comprised of 3 pins. Moreover, it detects infrared spectrums .
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