Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23F Toshiba SSM3K329R,LF(T

SSM3K329R-LF-T Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23F Toshiba SSM3K329R,LF(T
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
3.5 A
Mounting Type:
Surface Mount
Transistor Material:
Silicon
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
2.89e+008 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 3.5 A 30 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3K329R,LF(T. It has a maximum of 30 v drain source voltage. While 3.5 a of maximum continuous drain current. The product is available in surface mount configuration. The transistor is manufactured from highly durable silicon material. The product carries 1v of maximum gate threshold voltage. It provides up to 2.89e+008 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 3 pins.

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Datasheet - SSM3K329R,LF(T(Technical Reference)

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