N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220FM ROHM R8003KNXC7G
Product Information
Maximum Drain Source Voltage:
800 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
1.8 Ω
Package Type:
TO-220FM
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3 A
Pin Count:
3
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220FM ROHM R8003KNXC7G. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220FM ROHM R8003KNXC7G.
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Yes. We ship R8003KNXC7G Internationally to many countries around the world.
This is N-Channel MOSFET 3 A 800 V 3-Pin TO-220FM manufactured by ROHM. The manufacturer part number is R8003KNXC7G. It has a maximum of 800 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 1.8 ω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. It contains 3 pins.
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