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onsemi NTMFSC010N08M7

NTMFSC010N08M7 onsemi
NTMFSC010N08M7
NTMFSC010N08M7
onsemi

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
61 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.01 Ω
Package Type:
DFN
Number of Elements per Chip:
1
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 120µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Ta), 78.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 40 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
Dual Cool™
Supplier Device Package:
8-DFN (5x6.15)
Current - Continuous Drain (Id) @ 25°C:
12.5A (Ta), 61A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
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This is manufactured by onsemi. The manufacturer part number is NTMFSC010N08M7. It has a maximum of 80 v drain source voltage. While 61 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.01 ω maximum drain source resistance. The package is a sort of dfn. It consists of 1 elements per chip. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 120µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 10mohm @ 10a, 10v. The maximum gate charge and given voltages include 38 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.3w (ta), 78.1w (tc). The product's input capacitance at maximum includes 2700 pf @ 40 v. It has a long 6 weeks standard lead time. The product dual cool™, is a highly preferred choice for users. 8-dfn (5x6.15) is the supplier device package value. The continuous current drain at 25°C is 12.5a (ta), 61a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - NTMFSC010N08M7(Technical Reference)
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NTMFSC010N08M7(Datasheets)
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Mult Dev 06/Dec/2022(PCN Design/Specification)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

Yes. You can also search NTMFSC010N08M7 on website for other similar products.
We accept all major payment methods for all products including ET21701126. Please check your shopping cart at the time of order.
You can order onsemi brand products with NTMFSC010N08M7 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTMFSC010N08M7. You can also check on our website or by contacting our customer support team for further order details on onsemi NTMFSC010N08M7.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21701126 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21701126.
Yes. We ship NTMFSC010N08M7 Internationally to many countries around the world.