Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.026 Ω
Package Type:
TDSON
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21634948 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21634948.
Yes. We ship IPG20N06S4L26AATMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET 20 A 60 V 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S4L26AATMA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.026 ω maximum drain source resistance. The package is a sort of tdson. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
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